Semiconductor Informations

File Download: IRG4PC50K.PDF
| IRG4PC50K International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR PD - 91583B IRG4PC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT C Features High short circuit rating optimized for motor control, tsc =10 s, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V G |
| IRG4PC50KD IRF - INSULATED GATE BIPOLAR TRANSISTOR PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(on) typ. = 1.84V q q q q q q Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10 s @125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher ef |
| IRG41BC10UDPBF Insulated Gate Bipolar Transistor - International Rectifier PD - 95603 IRG4IBC10UDPbF Lead-Free www.irf.com 1 7, 28, 04 IRG4IBC10UDPbF 2 www.irf.com IRG4IBC10UDPbF www.irf.com 3 IRG4IBC10UDPbF 4 www.irf.com IRG4IBC10UDPbF www.irf.com 5 IRG4IBC10UDPbF 6 www.irf.com IRG4IBC10UDPbF www.irf.com 7 IRG4IBC10UDPbF 8 www.irf.com IRG4I |
| IRG41BC30UD Ultra Fast CoPack IGBT - International Rectifier PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged with |