Semiconductor Informations

File Download: IRG4PC50S.PDF
| IRG4PC50S IRF - INSULATED GATE BIPOLAR TRANSISTOR PD - 91581A IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A n-channel Benefi |
| IRG4PC50SDPBF International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR PD - 97316 IRG4PC50SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Standard Speed CoPack IGBT Features C VCES = 600V G E VC |
| IRG41BC10UDPBF Insulated Gate Bipolar Transistor - International Rectifier PD - 95603 IRG4IBC10UDPbF Lead-Free www.irf.com 1 7, 28, 04 IRG4IBC10UDPbF 2 www.irf.com IRG4IBC10UDPbF www.irf.com 3 IRG4IBC10UDPbF 4 www.irf.com IRG4IBC10UDPbF www.irf.com 5 IRG4IBC10UDPbF 6 www.irf.com IRG4IBC10UDPbF www.irf.com 7 IRG4IBC10UDPbF 8 www.irf.com IRG4I |
| IRG41BC30UD Ultra Fast CoPack IGBT - International Rectifier PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged with |