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IRG4PC50UD-EPBF
IGBT 600V 55A 200W TO247-3 / Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
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[ Descriptions ]
| IRG4PC50UD IRF - INSULATED GATE BIPOLAR TRANSISTOR PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes fo |
| IRG4PC50UDPBF International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR PD -95185 IRG4PC50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes |
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| IRG41BC30UD Ultra Fast CoPack IGBT - International Rectifier PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged with |
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