Semiconductor Informations
| IRG7R313UPBF International Rectifier - PDP Trench IGBT PD - 97484 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7R313UPbF Key Parameters 330 1.35 160 150 V V A °C VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max C |
| IRG41BC10UDPBF Insulated Gate Bipolar Transistor - International Rectifier PD - 95603 IRG4IBC10UDPbF Lead-Free www.irf.com 1 7, 28, 04 IRG4IBC10UDPbF 2 www.irf.com IRG4IBC10UDPbF www.irf.com 3 IRG4IBC10UDPbF 4 www.irf.com IRG4IBC10UDPbF www.irf.com 5 IRG4IBC10UDPbF 6 www.irf.com IRG4IBC10UDPbF www.irf.com 7 IRG4IBC10UDPbF 8 www.irf.com IRG4I |
| IRG41BC30UD Ultra Fast CoPack IGBT - International Rectifier PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged with |