Semiconductor Informations
Search IRGP6630 Datasheet (PDF)
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File Download: IRGP6630.PDF
[ Descriptions ]
| IRGP6630DPbF International Rectifier - Insulated Gate Bipolar Transistor VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5 s, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications Welding H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF TO 247AC C Collector GCE IRGP6630D EPbF TO 247AD E Emitter Features Low VCE(ON) and Switching Losses Opt |
| IRGP6630D-EPbF International Rectifier - Insulated Gate Bipolar Transistor VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5 s, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications Welding H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF TO 247AC C Collector GCE IRGP6630D EPbF TO 247AD E Emitter Features Low VCE(ON) and Switching Losses Opt |
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