Semiconductor Informations

File Download: IRGPC40UD2.PDF
| IRGPC40UD2 IRF - INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet Index Next Data Sheet PD - 9.808A IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C UltraFast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = |
| IRG41BC10UDPBF Insulated Gate Bipolar Transistor - International Rectifier PD - 95603 IRG4IBC10UDPbF Lead-Free www.irf.com 1 7, 28, 04 IRG4IBC10UDPbF 2 www.irf.com IRG4IBC10UDPbF www.irf.com 3 IRG4IBC10UDPbF 4 www.irf.com IRG4IBC10UDPbF www.irf.com 5 IRG4IBC10UDPbF 6 www.irf.com IRG4IBC10UDPbF www.irf.com 7 IRG4IBC10UDPbF 8 www.irf.com IRG4I |
| IRG41BC30UD Ultra Fast CoPack IGBT - International Rectifier PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kH- in hard switching, >200 kH- in resonant mode IGBT co-packaged with |