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IRL2203NL International Rectifier - Power MOSFET ( Transistor )

PD - 94394 HEXFET® Power MOSFET l l l l l l IRL2203NS IRL2203NL VDSS = 30V RDS(on) = 7.0mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 116A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onres

IRL2203NS International Rectifier - Power MOSFET ( Transistor )

PD - 94394 HEXFET® Power MOSFET l l l l l l IRL2203NS IRL2203NL VDSS = 30V RDS(on) = 7.0mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 116A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onres

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IRL1004 HEXFET Power MOSFET - International Rectifier

PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generat

IRL1004L HEXFET Power MOSFET - International Rectifier

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift

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