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Search IRL2310 Datasheet (PDF)
International Rectifier
IRL2310
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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[ Descriptions ]
| IRL2310 International Rectifier - Power MOSFET ( Transistor ) PD - 9.1275 PRELIMINARY IRL2310 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at V GS= 4.5V & 10V 175°C Operating Temperature Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance |
Related Information
| IRL1004 HEXFET Power MOSFET - International Rectifier PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generat |
| IRL1004L HEXFET Power MOSFET - International Rectifier PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift |
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