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Infineon
IRL540NPBF
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.044 Ohm; Id 36A; TO-220AB; Pd 140W; Vgs +/-16V
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| UnikeyIC | 3,974 | 0.9278 | Visit Site | ||
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File Download: IRL540N.PDF
[ Descriptions ]
| IRL540NS IRF - HEXFET Power MOSFET PD -91535 IRL540NS, L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(on) = 0.044Ω ID = 36A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis |
| IRL540N IRF - 100V, 30A, 94W, HEXFET Power MOSFET Previous Datasheet Index Next Data Sheet PD - 9.1495 PRELIMINARY l l l l l l IRL540N HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V RDS(on) = 0.044Ω G S ID = 30A Description Fifth Generation HEXFETs from International Rectifier utilize adv |
Related Information
| IRL1004 HEXFET Power MOSFET - International Rectifier PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generat |
| IRL1004L HEXFET Power MOSFET - International Rectifier PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift |
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