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IRLL014NTRPBF
Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.14 Ohm; Id 2.8A; SOT-223; Pd 2.1W; Vgs +/-16V
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[ Descriptions ]
| IRLL014N International Rectifier - HEXFET Power MOSFET PD- 91499B IRLL014N HEXFET® Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This be |
| IRLL014NPBF International Rectifier - Power MOSFET ( Transistor ) PD- 95154 IRLL014NPbF Surface Mount Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G S ID = 2.0A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon |
Related Information
| IRL1004 HEXFET Power MOSFET - International Rectifier PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generat |
| IRL1004L HEXFET Power MOSFET - International Rectifier PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift |
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