Semiconductor Informations
Search IRLM120A Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 44,000 | Visit Site | |||
| Win Source | 25,000 | Visit Site | |||
| Worldway Electronics | 23,877 | Visit Site | |||
| Esaler Electronic | 4,000 | 0.296 | Visit Site | ||
| ICSuperman Co. | 1,689 | 0.2065 | Visit Site | ||
| Fmall Co., Limited | 27,740 | 0.2306 | Visit Site | ||
| UnikeyIC | 1,611 | Visit Site | |||
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File Download: IRLM120A.PDF
[ Descriptions ]
| IRLM120A International Rectifier - HEXFET Power MOSFET Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ.) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM |
Related Information
| IRL1004 HEXFET Power MOSFET - International Rectifier PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generat |
| IRL1004L HEXFET Power MOSFET - International Rectifier PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift |
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