Semiconductor Informations
Search IRLML5203 Datasheet (PDF)
Infineon
IRLML5203TRPBF
Mosfet, Power; P-ch; Vdss -30V; Rds(on) 98MILLIOHMS; Id -3A; MICRO3; Pd 1.25W; -55DEGC
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Future Electronics | 294,000 | Visit Site | |||
| Arrow Electronics | 51 | 0.427 | Visit Site | ||
| GreenChips | 2,830 | 0.1985 | Visit Site | ||
| Component Stockers USA | 810,635 | 0.11 | Visit Site | ||
| Weyland Electronics Group Pte. Ltd. | 4,374 | 0.14 | Visit Site | ||
| Win Source | 120,000 | Visit Site | |||
| UnikeyIC | 47,996 | 0.3113 | Visit Site | ||
Powered by Octopart | |||||
File Download: IRLML5203.PDF
[ Descriptions ]
| IRLML5203 International Rectifier - HEXFET Power MOSFET PD - 93967 PROVISIONAL IRLML5203 HEXFET® Power MOSFET RDS(on) max (mΩ) 98@VGS = -10V 165@VGS = -4.5V l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -30V ID -3.0A -2.6A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon |
| IRLML5203PBF International Rectifier - Power MOSFET ( Transistor ) l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in batte |
Related Information
| IRL1004 HEXFET Power MOSFET - International Rectifier PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generat |
| IRL1004L HEXFET Power MOSFET - International Rectifier PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fift |
Related Part Number
IRF7326D2PBF | IRFD1Z0 |IRFZ34NL | IRIS-G5624A |
IRF320 | IRLB4132PbF |