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IXGH50N60B2

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD

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[ Descriptions ]

IXGH50N60B IXYS Corporation - (IXGx50N60B) HiPerFAST IGBT

HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 VCE(sat) tfi(typ) = 120 TO-247 AD (IXGH) = 600 = 75 = 2.3 V A V ns Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 7

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IXGH50N60B (IXGx50N60B) HiPerFAST IGBT - IXYS Corporation

HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 VCE(sat) tfi(typ) = 120 TO-247 AD (IXGH) = 600 = 75 = 2.3 V A V ns Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V

IXGH60N60C3 High Speed PT IGBT - IXYS Corporation

GenX3TM 600V IGBT High Speed PT IGBT for 40-100kH- Switching IXGH60N60C3 VCES IC110 VCE(sat) tfi (typ) = = ≤ = 600V 60A 2.5V 50ns TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.)

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