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J211 NXP Semiconductors - 25V, 10mA, N-channel Field-effect Transistor

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product speci cation File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product speci cation N-channel eld-effect transistors FEATURES High speed switching Interchangeability of drain and source connections High impedance. APPLICATIONS Analog switches Choppers, multiplexers an

J211 Fairchild Semiconductor - N-Channel RF Amplifier

J210 , J211 , J212 , MMBFJ210 , MMBFJ211 , MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V , 62W , 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF, VHF mixer, amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process

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J211 25V, 10mA, N-channel Field-effect Transistor - NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product speci cation File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product speci cation N-channel eld-effect transistors FEATURES High speed switching Interchangeability of dr

J211 N-Channel RF Amplifier - Fairchild Semiconductor

J210 , J211 , J212 , MMBFJ210 , MMBFJ211 , MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V , 62W , 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF, VHF mixer, amplifier and applications where Proc