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[ Descriptions ]
| J211 NXP Semiconductors - 25V, 10mA, N-channel Field-effect Transistor DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product speci cation File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product speci cation N-channel eld-effect transistors FEATURES High speed switching Interchangeability of drain and source connections High impedance. APPLICATIONS Analog switches Choppers, multiplexers an |
| J211 Fairchild Semiconductor - N-Channel RF Amplifier J210 , J211 , J212 , MMBFJ210 , MMBFJ211 , MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V , 62W , 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF, VHF mixer, amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process |
Related Information
| J211 25V, 10mA, N-channel Field-effect Transistor - NXP Semiconductors DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product speci cation File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product speci cation N-channel eld-effect transistors FEATURES High speed switching Interchangeability of dr |
| J211 N-Channel RF Amplifier - Fairchild Semiconductor J210 , J211 , J212 , MMBFJ210 , MMBFJ211 , MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V , 62W , 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF, VHF mixer, amplifier and applications where Proc |