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J412 Toshiba Semiconductor - P-Channel MOSFET ( Transistor ) - 2SJ412

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA



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J412 P-Channel MOSFET ( Transistor ) - 2SJ412 - Toshiba Semiconductor

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: I