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Toshiba
TK10A50D(STA4,Q,M)
Trans MOSFET N-CH Si 500V 10A 3-Pin(3+Tab) TO-220SIS

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[ Descriptions ]

K10A50D Toshiba - TK10A50D

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25


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