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Toshiba
K10A60D
Mosfet N-ch 600V 10A TO220SIS
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K10A60D Toshiba - 600V, 10A, Silicon N Channel MOSFET, TK10A60D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25
K10A60DR Toshiba - 600V, 10A, N-Channel MOSFET ( TK10A60D )



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