Semiconductor Informations
| K1170 Hitachi Semiconductor - MOSFET ( Transistor ) - 2SK1170 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 |
| K117 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK117 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = 50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char |
| K1100BA (K11xxBA) clock oscillator - MTRONPTI K1100BA, K1150BA, K1125BA, K1110BA Series 14 pin DIP, 5.0 Volt, Clock Oscillator 4-pin Package, Compatible with 14-pin DIL 1.0MH- to 70MH- Frequency Range 4-pin Package, Compatible with 14-pin DIL HCMOS Circuit, TTL, CMOS Compatible 1.0MH- to Tight 70MH- Frequency Range Available Symmetry (4 |
| K1100E70 silicon bilateral voltage triggered switch - Teccor DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac |
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