Semiconductor Informations
| K11A60D Toshiba Semiconductor - TK11A60D TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 2 |
| K1100BA (K11xxBA) clock oscillator - MTRONPTI K1100BA, K1150BA, K1125BA, K1110BA Series 14 pin DIP, 5.0 Volt, Clock Oscillator 4-pin Package, Compatible with 14-pin DIL 1.0MH- to 70MH- Frequency Range 4-pin Package, Compatible with 14-pin DIL HCMOS Circuit, TTL, CMOS Compatible 1.0MH- to Tight 70MH- Frequency Range Available Symmetry (4 |
| K1100E70 silicon bilateral voltage triggered switch - Teccor DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac |