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Search K11A60D Datasheet (PDF)
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[ Descriptions ]
| K11A60D Toshiba Semiconductor - TK11A60D TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK11A60D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 2 |
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