Search K12A60D Datasheet (PDF)

Toshiba

TK12A60D(STA4,Q,M)

Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-220SIS

Distributor	Stock	1	10	100	Link
Newark	178	3.96	2.59	1.81	Visit Site
Avnet	18	3.28	2.72	1.78	Visit Site
Mouser	199	3.96	2.01	1.92	Visit Site
DigiKey	65	3.96	2.593	1.8144	Visit Site
Win Source	54,600				Visit Site
Worldway Electronics	29,743		0.3687	0.3617	Visit Site
UnikeyIC	153			1.6218	Visit Site
Powered by Octopart

File Download: K12A60D.PDF

[ Descriptions ]

K12A60D Toshiba Semiconductor - TK12A60D

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (

Related Information

K120 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9

K1200E70 silicon bilateral voltage triggered switch - Teccor

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac

Related Part Number

K1363 | K1169 |

K1404 | K1388 |

K1737 | K1732 |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.