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Toshiba
TK12A60U
Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-220SIS / MOSFET N-CH 600V 12A TO220SIS
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[ Descriptions ]
| K12A60U Toshiba Semiconductor - TK12A60U TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25° |
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