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Search K13A60D Datasheet (PDF)
Toshiba
TK13A60D
Power Field-Effect Transistor, 13A I(D), 600V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Weyland Electronics Group Pte. Ltd. | 2,259 | 0.9 | Visit Site | ||
| Win Source | 22,500 | Visit Site | |||
| Worldway Electronics | 26,030 | Visit Site | |||
| Anlinkda | 28,975 | 1.392 | Visit Site | ||
| RC Electronics | 26,024 | 1.01 | Visit Site | ||
| SHENGYU ELECTRONICS | 15,557 | 0.4594 | Visit Site | ||
| Best Source | 11,937 | 3.0899 | Visit Site | ||
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[ Descriptions ]
| K13A60D Toshiba Semiconductor - TK13A60D TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Ch |
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