Semiconductor Informations
| K15A60U Toshiba - TK15A60U TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25� |
| K150 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE / LOW LEAKAGE - Knox LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K150 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
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