Semiconductor Informations

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| K16A60W Toshiba Semiconductor - TK16A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16A60W 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W TO-220SIS 1: Gate 2: Drain 3: Source 1 |
| K1601 (K1601 / K1602) Sinewave - MTRONPTI K1601 & K1602 Series 14 pin DIP, 5.0 Volt, Sinewave, TCXO |
| K1601T CMOS/TTL - MTRONPTI K1601T Series 14 DIP, 5.0 Volt, CMOS, TTL, TCXO Former Product Phase-Locked Loops, SONET, Reference Signal, Signal Tracking, ATM Pin Connections MtronPTI reserves the right to make changes to the product(s) and service(s) described herein without notice. No liability is assumed as a resul |