Search K18A50D Datasheet (PDF)

Toshiba
TK18A50D(STA4,Q,M)
MOSFET N-CH 500V 18A TO220SIS / N-Channel 500 V 18A (Ta) 50W (Tc) Through Hole TO-220SIS
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[ Descriptions ]


K18A50D Toshiba - Field Effect Transistor

TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK18A50D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25


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