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2SK1933
10 A 900 V 1.2 Ohm N-channel Si Power Mosfet
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Semicontronic17,4090.150.150.15Visit Site
SHENGYU ELECTRONICS14,2030.30630.30020.29Visit Site
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[ Descriptions ]


K1933 Hitachi Semiconductor - MOSFET ( Transistor ) - 2SK1933

2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode


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