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K2008 Hitachi Semiconductor - Silicon N-Channel MOS FET

2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G1 2 3 1. Gate 2. Drain 3. Source S 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain curre


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DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac



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