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K2225Cx NEC - Transformers and Inductors

K2225 Hitachi Semiconductor - 1500V, 2A, N-Channel MOSFET, 2SK2225

2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source

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K2200 MOSFET ( Transistor ) - 2SK2200 - Toshiba Semiconductor

2SK2200 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV) 2SK2200 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm - 4-V gate drive - Low drain source ON resistance : RDS (ON) = 0.28 Ω (typ.) - High forward transfer admittance : |Yfs| = 3.5 S (typ

K2200E70 silicon bilateral voltage triggered switch - Teccor

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac

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