Semiconductor Informations
| K2350 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK2350 2SK2350 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L π MOSV) 2 2SK2350 Switching Regulator, DC DC Converter and Motor Drive Applications - 4-V gate drive - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0.26 Ω (typ.) : |Yfs| = 8 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 200 V) : Vth = 1.5~3.5 V ( |
| K2312 MOSFET ( Transistor ) - 2SK2312 - Toshiba Semiconductor 2SK2312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L π MOSV) 2 2SK2312 Chopper Regulator, DC DC Converter and Motor Drive Applications - 4-V gate drive - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 13 mâ„ |
| K2313 MOSFET ( Transistor ) - 2SK2313 - Toshiba Semiconductor 2SK2313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV) 2SK2313 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm - 4-V gate drive - Low drain source ON resistance : RDS (ON) = 8 mΩ (typ.) - High forward transfer admittance : |Yfs| = 60 S (typ.) |