Semiconductor Informations
Search K2607 Datasheet (PDF)
Toshiba
2SK2607
Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 220 | Visit Site | |||
| Anlinkda | 18,602 | 1.932 | Visit Site | ||
| RC Electronics | 16,702 | 1.41 | Visit Site | ||
| SHENGYU ELECTRONICS | 10,819 | 1.709 | Visit Site | ||
| Run Hong Electronics | 8,476 | 1.0387 | Visit Site | ||
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[ Descriptions ]
| K2607 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK2607 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2607 Chopper Regulator, DC DC Converter and Moter Drive Applications Unit: mm - Low drain source ON resistance : RDS (ON) = 1.0 Ω (typ.) - High forward transfer admittance : |Yfs|= 7.0 S (typ.) - Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) - Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = |
Related Information
| K2601 MOSFET ( Transistor ) - 2SK2601 - Toshiba Semiconductor 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2601 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON-resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (t |
| K2604 MOSFET ( Transistor ) - 2SK2604 - Toshiba Semiconductor |
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