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K2611 Toshiba Semiconductor - 9A, 900V, N-Channel MOSFET, 2SK2611

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2611 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 1.1 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Ab

K2611B Winsemi - Silicon N-Channel MOSFET

K2611B Product Description Silicon N-Channel MOSFET Features 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V Ultra-low Gate charge(Typical 66nC) Fast Switching Capability 100%Avalanche Tested Improved dv, dt capability RoHS product General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced

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K2601 MOSFET ( Transistor ) - 2SK2601 - Toshiba Semiconductor

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2601 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON-resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (t

K2604 MOSFET ( Transistor ) - 2SK2604 - Toshiba Semiconductor

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