Semiconductor Informations

File Download: K2640.PDF
| K2640 Fuji Electric - MOSFET ( Transistor ) - 2SK2640 2SK2640-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 0,9Ω 10A 50W > Outline Drawing > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum |
| K2601 MOSFET ( Transistor ) - 2SK2601 - Toshiba Semiconductor 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2601 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON-resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (t |
| K2604 MOSFET ( Transistor ) - 2SK2604 - Toshiba Semiconductor |