Semiconductor Informations
| K2662 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK2662 2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2662 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 1.35 Ω (typ.) : |Yfs| = 4.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Abs |
| K2601 MOSFET ( Transistor ) - 2SK2601 - Toshiba Semiconductor 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2601 DC DC Converter, Relay Drive and Motor Drive Applications - Low drain source ON-resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0.56 Ω (typ.) : |Yfs| = 7.0 S (t |
| K2604 MOSFET ( Transistor ) - 2SK2604 - Toshiba Semiconductor |