Semiconductor Informations

File Download: K2717.PDF
| K2717 Toshiba - Silicon N Channel MOS Type Field Effect Transistor 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2717 DC DC Converter and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100 A (max) (VDS = 720 V) l Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Rati |
| K270 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K2700 MOSFET ( Transistor ) - 2SK2700 - Toshiba Semiconductor 2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2700 Chopper Regulator, DC DC Converter and Motor Drive Applications - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 3.7 Ω (typ.) Unit: mm : |