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| K2788 Hitachi Semiconductor - MOSFET ( Transistor ) - 2SK2788 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) Low drive current High speed switching 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain |
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