Semiconductor Informations
| K2845 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK2845 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π MOSIII) 2SK2845 Chopper Regulator, DC, DC Converter and Motor Drive Applications - Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.) - High forward transfer admittance : |Yfs| = 0.9 S (typ.) - Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) - Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) |
| K2800 MOSFET ( Transistor ) - 2SK2800 - Hitachi Semiconductor 2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features Low on-resistance R DS(on) = 15 mΩ typ. High speed switching Low drive current 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain ( |
| K2803 MOSFET ( Transistor ) - 2SK2803 - Sanken 2SK2803 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±3 ± 12 30 (Tc = 25ºC) 30 3 150 55 to +150 (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) |