Semiconductor Informations

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| K2957 Renesas - MOSFET ( Transistor ) - 2SK2957 2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 7 mΩ typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3. S |
| K2900-01 N-channel MOS-FET - Fuji Electric > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings |
| K2902-01MR MOSFET ( Transistor ) - 2SK2902-01MR - Fuji Electric 2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings |