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| K2959 Hitachi Semiconductor - Silicon N Channel MOS FET 2SK2959 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 7mΩ typ. 4V gate drive devices. High speed switching Outline TO 220AB D G S ADE-208-569C (Z) 4th. Edition Aug 1998 1 2 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak cur |
Related Information
| K2900-01 N-channel MOS-FET - Fuji Electric > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings |
| K2902-01MR MOSFET ( Transistor ) - 2SK2902-01MR - Fuji Electric 2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings |
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