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K2983 NEC - MOSFET ( Transistor ) - 2SK2983

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) Low Ciss Ciss = 1200 pF TYP. Built-in gate protection dio

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K2900-01 N-channel MOS-FET - Fuji Electric

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings

K2902-01MR MOSFET ( Transistor ) - 2SK2902-01MR - Fuji Electric

2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings

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