Semiconductor Informations

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| K2985 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK2985 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) 2SK2985 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 70 S (typ.) l Low leakage current : IDSS = 100 A (max) (VDS = 60 V) l Enhancement mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum |
| K2900-01 N-channel MOS-FET - Fuji Electric > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings |
| K2902-01MR MOSFET ( Transistor ) - 2SK2902-01MR - Fuji Electric 2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings |