Semiconductor Informations
| K30A06J3A Toshiba Semiconductor - TK30A06J3A TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3A Switching Regulator Applications Unit: mm - Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) - High forward transfer admittance: |Yfs| = 34 S (typ.) - Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) - Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (T |
| K300 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K3000F1 silicon bilateral voltage triggered switch - Teccor DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac |