Semiconductor Informations
Search K30N60HS Datasheet (PDF)
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[ Descriptions ]
| K30N60HS Infineon - SKW30N60HS SKW30N60HS High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS c |
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