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YK3142303000G
Barrier Strip Terminal Block, 15A, 1 Row(s), 1 Deck(s)
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K3142 Hitachi Semiconductor - MOSFET ( Transistor ) - 2SK3142

2SK3142 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO 220CFM ADE-208-681A (Z) 2nd. Edition February 1999 D G 123 1. Gate 2. Drain 3. Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage


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