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| K3155 Hitachi Semiconductor - MOSFET ( Transistor ) - 2SK3155 2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Februaty 1999 Features Low on-resistance R DS = 100 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3155 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain curr |
Related Information
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