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VBsemi

K3209-VB

N—channelchannel, 200V, 45A, Rds(on), 38MΩ@10V, 43MΩ@4.5V, 20VGS(±V)；2VTH(V) ENCAPSULATION：TO220F

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[ Descriptions ]

K3209 Hitachi Semiconductor - MOSFET ( Transistor ) - 2SK3209

2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features Low on-resistance R DS =35mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 http:, , www.Datasheet-PDF.com, 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to

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