Semiconductor Informations

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| K330 Knox Inc - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 DYNAMIC IMPEDANCE MAX Z- MAX Zzk @ IZ = 10 mA @ IZ = 1 mA (OHMS) (OHMS) 20 125 20 125 2 |
| K3306 NEC - MOSFET ( Transistor ) - 2SK3306 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES L |
| K330 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K3302 Silicon N Channel MOS Type Field Effect Transistor - Toshiba Semiconductor 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 |