Semiconductor Informations
| K3326 NEC - MOSFET ( Transistor ) - 2SK3326 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3326 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low gate ch |
| K330 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K3302 Silicon N Channel MOS Type Field Effect Transistor - Toshiba Semiconductor 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 � |