Semiconductor Informations
| K3462 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3462 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) 2SK3462 Unit: mm Switching Regulator, DC, DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 |
| K3403 MOSFET ( Transistor ) - 2SK3403 - Toshiba Semiconductor 2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3403 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enh |
| K3404 MOSFET ( Transistor ) - 2SK3404 - NEC DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3404 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC, DC co |