Semiconductor Informations
Search K3561 Datasheet (PDF)
Toshiba
2SK3561Q
MOSFET; N-Ch; VDSS 500V; RDS(ON) 0.75 Ohm; ID 8A; 2-10U1B; PD 40W; VGS +/-30V; Qg 28nC
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Component Stockers USA | 728 | 99.99 | Visit Site | ||
| Worldway Electronics | 29,926 | Visit Site | |||
| ComSIT Distribution GmbH | 400 | Visit Site | |||
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[ Descriptions ]
| K3561 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3561 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Charact |
Related Information
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