Semiconductor Informations
K3562 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3562 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics S |
K3562M EPCOS - IF Filter SAW Components Data Sheet K 3562 M SAW Components IF Filter for Quasi, Split Sound Applications Data Sheet Standard s B, G s D, K s I K 3562 M 38,00 MHz Plastic package SIP5K Features s TV IF filter for quasi, split sound applications (separate picture and sound channel) s Picture channel with Nyquist slope and sound suppression, symmetrical output s Customized group delay predistortion s |
K350 Silicon N-Channel MOSFET - Hitachi |
K3500G Clock Oscillator - MTRONPTI K3500G Series 8 pin DIP, 3.3 Volt, CMOS, Clock Oscillator THIS PRODUCT IS NOT RECOMMENDED FOR NEW DESIGNS. 3.3V Crystal Clock Oscillators PLEASE REFER TO THE M3H PRODUCT SERIES. 4-pin Package, Compatible with 8-pin DIL 1.0MH- to 70MH- Frequency Range CMOS Compatible Tight Symmetry (45, 55%) Ava |
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